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PD - 9.1362A
HEXFET ? Power MOSFET
PRELIMINARY
IRFI520N
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Advanced Process Technology
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l
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l
Isolated Package
High Voltage Isolation = 2.5KVRMS ?
Sink to Lead Creepage Dist. = 4.8mm
Fully Avalanche Rated
G
D
V DSS = 100V
R DS(on) = 0.20 ?
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional
insulating hardware in commercial-industrial applications.
The moulding compound used provides a high isolation
S
I D = 7.6A
capability and a low thermal resistance between the tab
and external heatsink. This isolation is equivalent to using
a 100 micron mica barrier with standard TO-220 product.
The Fullpak is mounted to a heatsink using a single clip or
by a single screw fixing.
Absolute Maximum Ratings
TO-220 FULLPAK
Parameter
Max.
Units
I D @ T C = 25°C
Continuous Drain Current, V GS @ 10V
7.6
I D @ T C = 100°C
I DM
P D @T C = 25°C
V GS
E AS
I AR
E AR
dv/dt
Continuous Drain Current, V GS @ 10V
Pulsed Drain Current ??
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy ??
Avalanche Current ??
Repetitive Avalanche Current ?
Peak Diode Recovery dv/dt ??
5.3
38
30
0.20
±20
91
5.7
3.0
5.0
A
W
W/°C
V
mJ
A
mJ
V/ns
T J
T STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw.
-55 to + 175
300 (1.6mm from case)
10 lbf?in (1.1N?m)
°C
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
R θ JC
R θ JA
Junction-to-Case
Junction-to-Ambient
––––
––––
––––
––––
5.0
65
°C/W
3/16/98
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